Electrically function switchable magnetic domain-wall memory

Abstract More-versatile memory is strongly desired for end-users to protect their information in the era. In particular, bit-level switchable memory, from rewritable read-only function, allows prevent any important data being tampered with. However, no such has been reported. We demonstrated function can be converted into by applying a sufficiently large current pulse U-shaped domain-wall which composes an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale magnetic arrays on 4-inch Si/SiO2 substrate were demonstrated. Furthermore, we confirmed stored or state at according security-needs of end-users. Our work not only provides solution personal confidential data, but also paves way developing multi-functional spintronic devices.